maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current i c 200 ma power dissipation (note 1) p d 350 mw power dissipation (note 2) p d 300 mw power dissipation (note 3) p d 150 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per transistor: (t a =25c unless otherwise noted) npn pnp symbol test conditions min typ typ max units i cev v ce =30v, v eb =3.0v - - - 50 na bv cbo i c =10a 60 115 90 - v bv ceo i c =1.0ma 40 60 55 - v bv ebo i e =10a 6.0 7.5 7.9 - v v ce(sat) i c =10ma, i b =1.0ma - 0.057 0.050 0.100 v v ce(sat) i c =50ma, i b =5.0ma - 0.100 0.100 0.200 v v be(sat) i c =10ma, i b =1.0ma 0.65 0.75 0.75 0.85 v v be(sat) i c =50ma, i b =5.0ma - 0.85 0.85 0.95 v h fe v ce =1.0v, i c =0.1ma 90 240 130 - h fe v ce =1.0v, i c =1.0ma 100 235 150 - h fe v ce =1.0v, i c =10ma 100 215 150 300 h fe v ce =1.0v, i c =50ma 70 110 120 - h fe v ce =1.0v, i c =100ma 30 50 55 - cmlt3904e cmlt3904eg* npn cmlt3906e cmlt3906eg* pnp cmlt3946e cmlt3946eg* npn/pnp enhanced specification complementary picomini tm silicon transistors central semiconductor corp. tm r3 (23-january 2009) description: these central semiconductor devices are combinations of dual, enhanced specification transistors in a space saving sot-563 package, designed for small signal general purpose amplifier and switching applications. * device is halogen free by design marking codes: cmlt3904e: l04 cmlt3906e: l06 cmlt3946e: l46 cmlt3904eg*: c4g cmlt3906eg*: c6g cmlt3946eg*: 46g enhanced specifications: ? bv cbo from 40v min to 60v min (pnp) ? bv ebo from 5.0v min to 6.0v min (pnp) ? h fe from 60 min to 70 min (npn/pnp) ? v ce(sat) from 0.3v max to 0.2v max (npn) from 0.4v max to 0.2v max (pnp) sot-563 case notes: (1) ceramic or aluminum core pc board with copper mounting pad area of 4.0 mm 2 (2) fr-4 epoxy pc board with copper mounting pad area of 4.0 mm 2 (3) fr-4 epoxy pc board with copper mounting pad area of 1.4 mm 2 ? enhanced specification ? ? ? ? ? ? ? ? ?
central semiconductor corp. tm sot-563 case - mechanical outline cmlt3904e cmlt3904eg* npn cmlt3906e cmlt3906eg* pnp cmlt3946e cmlt3946eg* npn/pnp enhanced specification complementary picomini tm silicon transistors r3 (23-january 2009) electrical characteristics per transistor - continued: (t a =25c) symbol test conditions min max units f t v ce =20v, i c =10ma, f=100mhz 300 mhz c ob v cb =5.0v, i e =0, f=1.0mhz 4.0 pf c ib v be =0.5v, i c =0, f=1.0mhz 8.0 pf h ie v ce =10v, i c =1.0ma, f=1.0khz 1.0 12 k h re v ce =10v, i c =1.0ma, f=1.0khz 0.1 10 x10 -4 h fe v ce =10v, i c =1.0ma, f=1.0khz 100 400 h oe v ce =10v, i c =1.0ma, f=1.0khz 1.0 60 s nf v ce =5.0v, i c =100a, r s =1.0k 4.0 db f=10hz to 15.7khz t d v cc =3.0v, v be =0.5v, i c =10ma, i b1 =1.0ma 35 ns t r v cc =3.0v, v be =0.5v, i c =10ma, i b1 =1.0ma 35 ns t s v cc =3.0v, i c =10ma, i b1 =i b2 =1.0ma 200 ns t f v cc =3.0v, i c =10ma, i b1 =i b2 =1.0ma 50 ns * device is halogen free by design lead code: 1) emitter q1 2) base q1 3) collector q2 4) emitter q2 5) base q2 6) collector q1 cmlt3904e cmlt3904eg* cmlt3906e cmlt3906eg* cmlt3946e cmlt3946eg*
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